FS 25R12KE3G -

IGBT module EconoPACK?2 1200 V, FS 25R12KE3G, Infineon

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Related Categories: Transistors | Transistors - Bipolar | Diodes | Discrete Modules | Transistors - MOSFETs

Related Products: Diode module SEMIPACK 2 1600 V | Diode module SEMIPACK 0 1200 V | IGBT module EconoPACK?2 1200 V | IGBT module 62 mm 1200 V | IGBT module SEMITRANS 3 1200 V

Related Manufacturers: Texas Instruments | Microchip | IR | ST | Diotec

Voltage-controlled
Simple parallel switching
High overload capacity
High switching frequencies
The actuation power and robustness correspond to the power MOSFET
Each IGBT has an anti-parallel diode
Some modules with built-in power rectifier and braking chopper (PIM) for mains voltages of 230 to 690 V and above

Country of origin Hong Kong (HK)

Manufacturer Infineon

Gross weight (incl. package) 179.7 Gram

Dimensions (incl. package) 107 x 45 x 21 MM

Customs number 8541290000

UNSPSC (v5.03) 32111609