171-00-259,IGBT module EconoPACK?2 1200 V, BSM25GD120DN2, Infineon
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BSM25GD120DN2 - 

IGBT module EconoPACK?2 1200 V, BSM25GD120DN2, Infineon

Infineon BSM25GD120DN2
声明:图片仅供参考,请以实物为准!
制造商产品编号:
BSM25GD120DN2
仓库库存编号:
171-00-259
技术数据表:
View BSM25GD120DN2 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!
Related Manufacturers: Texas Instruments | Microchip | IR | ST | Diotec
Related Categories: Transistors | Transistors - Bipolar | Diodes | Discrete Modules | Transistors - MOSFETs
Related Products: Diode module SEMIPACK 2 1600 V | Diode module SEMIPACK 0 1200 V | IGBT module 62 mm 1200 V | IGBT module SEMITRANS 3 1200 V | IGBT module SEMITOP 3 600 V
电话:400-900-3095
QQ:800152669

BSM25GD120DN2Family Information

  • Voltage control
  • Simple parallel wiring
  • Overload safe (no "second breakdown")
  • Avalanche-proof
  • An advantageous combination of MOSFET and bipolar transistors
  • Switching speed, control function and robustness are the same as for the Power MOSFET
  • The turn-on resistance is nevertheless slightly lower and could be compared to that of a bipolar darlington transistor
  • IGBTs have no inverse diodes

BSM25GD120DN2产地与重量

Country of origin Malaysia (MY)
Manufacturer Infineon
Gross weight (incl. package) 876.0 Gram
Dimensions (incl. package) 110 x 45 x 40 MM
Customs number 8541290000
UNSPSC (v5.03) 32111609
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