BSM50GB120DN2 - 

IGBT module 34 mm 1200 V, BSM50GB120DN2, Infineon

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• Schurter
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• HellermannTyton
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• Semikron
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BSM50GB120DN2Family Information

• Voltage control
• Simple parallel wiring
• Overload safe (no "second breakdown")
• Avalanche-proof
• An advantageous combination of MOSFET and bipolar transistors
• Switching speed, control function and robustness are the same as for the Power MOSFET
• The turn-on resistance is nevertheless slightly lower and could be compared to that of a bipolar darlington transistor
• IGBTs have no inverse diodes

BSM50GB120DN2产地与重量