171-03-880,Power transistor TO-126 PNP -300 V, MJE350G, ON Semiconductor
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MJE350G - 

Power transistor TO-126 PNP -300 V, MJE350G, ON Semiconductor

ON Semiconductor MJE350G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJE350G
仓库库存编号：
171-03-880
技术数据表：
View MJE350G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MJE350G技术参数

Polarity PNP
Collector-emitter voltage -300 V
Collector current -0.5 A
Power dissipation 20 W
Housing type TO-126

MJE350G产品信息

Amplification 30 ...240
Related Categories: Transistors - Bipolar | Zener Diodes | Power Management | Transistors | Diodes
Related Manufacturers: Texas Instruments | ST | Diotec | Vishay | IR
Related Products: Power transistor TO-126 PNP -80 V | Power transistor TO-220 NPN 100 V | Power transistor TO-126 PNP -80 V | Power transistor TO-220 PNP -100 V | Power transistor TO-247 NPN 60 V
电话:400-900-3095
QQ:800152669

MJE350G产地与重量

Country of origin United States (US)
Manufacturer ON Semiconductor
Gross weight (incl. package) 1.0 Gram
Dimensions (incl. package) 20 x 1 x 1 MM
Customs number 8541290000
UNSPSC (v5.03) 32111607
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