IXFN120N20 - 

MOSFET N, 200 V 120 A 600 W SOT-227B, IXFN120N20, Ixys

IXFN120N20技术参数

IXFN120N20产品信息

IXFN120N20您可能还对以下元器件感兴趣

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• SKS Kontakttechnik
  Laboratory cable ? 0.64 mm 25 cm black, MKL 0,64/25-0,25, SKS Kontakttechnik
  
  型号：MKL 0,64/25-0,25
  仓库库存编号：140-14-080
  
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• SKS Kontakttechnik
  Test probe lead ? 4 mm safety plug 90° 100 cm red PVC, PL 2600 S W ROT / RED, SKS Kontakttechnik
  
  型号：PL 2600 S W ROT / RED
  仓库库存编号：110-45-128
  
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• Sanyo
  Rechargeable battery Lithium 3 V 100 mAh, ML-2430HS1, Sanyo
  
  型号：ML-2430HS1
  仓库库存编号：110-40-396
  
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  TVS diode, 28.2 V 600 W DO-15, P6KE33CA
  
  型号：P6KE33CA
  仓库库存编号：170-12-475
  
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  TVS diode, 26 V 1500 W SMC, SMCJ26CA
  
  型号：SMCJ26CA
  仓库库存编号：170-14-016
  
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• Bourns
  Trimmer Cermet 500 Ohm linear 500 mW, 3296P-1-501LF, Bourns
  
  型号：3296P-1-501LF
  仓库库存编号：164-00-703
  
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• Bourns
  Trimmer Cermet SMD 50 kOhm 200 mW, 3364W-1-503E, Bourns
  
  型号：3364W-1-503E
  仓库库存编号：300-36-971
  
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• RND Lab
  Gripping pliers 140 mm, RND 550-00039, RND Lab
  
  型号：RND 550-00039
  仓库库存编号：300-79-184
  
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• RND Lab
  Gripping pliers 155 mm, RND 550-00041, RND Lab
  
  型号：RND 550-00041
  仓库库存编号：300-79-186
  
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• Sanyo
  Photo battery Lithium 3 V 1500 mAh, CR-12600SE, Sanyo
  
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IXFN120N20Family Information

• The HiPerFET? power MOSFETs are now also available as Q class. For this series a lower line capacitance was realized due to a new chip. Thus, the transistor can also be switched at high frequencies with a lower drive performance.
• High-performance MOSFETs with fast reverse diodes
• Designed for low dv/dt sensitivity during current commutation
• No external free-wheeling diodes necessary for bridge configuration with an inductive load

IXFN120N20产地与重量