171-15-538,MOSFET N/N, 20 V 6.6 A 2.0 W SO-8, IRF7311PBF, IR
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IRF7311PBF - 

MOSFET N/N, 20 V 6.6 A 2.0 W SO-8, IRF7311PBF, IR

IR IRF7311PBF
声明:图片仅供参考,请以实物为准!
制造商:
IR IR
制造商产品编号:
IRF7311PBF
仓库库存编号:
171-15-538
技术数据表:
View IRF7311PBF Datasheet Datasheet
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IRF7311PBF技术参数

Polarity N/N
Drain source voltage 20 V
Drain current 6.6 A
Closing resistance 29 mOhm
Housing type SO-8

IRF7311PBF产品信息

Operating temperature -55...+150 °C
Power dissipation 2.0 W
Recovery time 77 ns
Related Products: MOSFET N, 25 V 0.22 A 350 mW SOT-23 | MOSFET N, 40 V 3.6 A 1.3 W SOT-23 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 30 V 2.2 A 500 mW SOT-23
Related Categories: Transistors - MOSFETs | Interfaces | Transistors - IGBT | Transistors | Drivers
Related Manufacturers: Texas Instruments | ST | Linear Technology | Microchip | Crydom
电话:400-900-3095
QQ:800152669

IRF7311PBF产地与重量

Country of origin Mexico (MX)
Manufacturer IR
Gross weight (incl. package) 1.0 Gram
Dimensions (incl. package) 8 x 5 x 2 MM
Customs number 8541290000
UNSPSC (v5.03) 32111603
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