171-31-391,MOSFET N, 1000 V 1.4 A 63 W TO-263, IXTA1R4N100P, Ixys
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IXTA1R4N100P - 

MOSFET N, 1000 V 1.4 A 63 W TO-263, IXTA1R4N100P, Ixys

Ixys IXTA1R4N100P
声明：图片仅供参考，请以实物为准！
制造商：
Ixys Ixys
制造商产品编号：
IXTA1R4N100P
仓库库存编号：
171-31-391
技术数据表：
View IXTA1R4N100P Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

IXTA1R4N100P技术参数

Polarity N
Drain source voltage 1000 V
Drain current 1.4 A
Closing resistance 11 Ohm
Housing type TO-263

IXTA1R4N100P产品信息

Operating temperature -55...+150 °C
Power dissipation 63 W
Variants Enhancement mode
Recovery time 750 ns
Related Categories: Rectifier Diodes | Thyristors & Triacs | Diodes | Transistors - MOSFETs | Solid State Relays & Contactors
Related Manufacturers: Diotec | IR | ST | Vishay | Crydom
Related Products: MOSFET N, 25 V 0.22 A 350 mW SOT-23 | MOSFET N, 40 V 3.6 A 1.3 W SOT-23 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 30 V 2.2 A 500 mW SOT-23
电话:400-900-3095
QQ:800152669

IXTA1R4N100P产地与重量

Country of origin United States (US)
Manufacturer Ixys
Gross weight (incl. package) 2.0 Gram
Dimensions (incl. package) 12 x 10 x 5 MM
Customs number 8541290000
UNSPSC (v5.03) 32111603
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