175-00-044,IR-photodiode 850 nm DIL-2, BPW34, Osram Semiconductors
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BPW34 - 

IR-photodiode 850 nm DIL-2, BPW34, Osram Semiconductors

Osram Semiconductors BPW34
声明:图片仅供参考,请以实物为准!
制造商产品编号:
BPW34
仓库库存编号:
175-00-044
技术数据表:
View BPW34 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

BPW34技术参数

Off-state voltage 32 V
Wavelength of max. photosensitivity 850 nm
Transmission angle 120 °
Photoelectric current 0.5...200 μA
Package DIL-2
Dark current 2 nA
Related Manufacturers: Everlight Electronics | Kingbright | Broadcom | Electronic Assembly | Vishay Telefunken
Related Categories: LEDs | Light Sensors | Displays | Optocouplers
Related Products: Ambient-light sensor 570 nm 15...70 uA | Pyroelectric IR sensor | Fresnel lenses for PIR sensors Polyethylene natural (white) -25...+55 °C | Fresnel lenses for PIR sensors Polyethylene natural (white) -25...+60 °C | Colour sensor, blue
电话:400-900-3095
QQ:800152669

BPW34Family Information

  • Photodiodes: An external voltage source is required for operating. An incident light beam leads to a rise of the barrier voltage of the diode.
  • The higher the applied voltage, the faster the photodiode reacts to alterations of the light signal.

BPW34产地与重量

Country of origin Malaysia (MY)
Manufacturer Osram Semiconductors
Gross weight (incl. package) 1.0 Gram
Dimensions (incl. package) 8 x 5 x 2 MM
Customs number 8541409090
UNSPSC (v5.03) 32111506
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