175-20-208,IR-photodiode 800 nm TO-18, S2381, Hamamatsu
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S2381 - 

IR-photodiode 800 nm TO-18, S2381, Hamamatsu

Hamamatsu S2381
声明：图片仅供参考，请以实物为准！
制造商产品编号：
S2381
仓库库存编号：
175-20-208
技术数据表：
View S2381 Datasheet Datasheet
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S2381技术参数

Off-state voltage 194 V
Wavelength of max. photosensitivity 800 nm
Photoelectric current N/A...490 mA
Package TO-18
Dark current 1 nA
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Related Categories: Light Sensors | LEDs | Sensor ICs
Related Manufacturers: Everlight Electronics | Kingbright | Broadcom | Sloan | Osram Semiconductors
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QQ:800152669

S2381Family Information

  • The avalanche photo diode is the most sensitive semiconductor-based light sensor
  • The photo current is the same as that of a conventional photo diode, but it is amplified by an electrical field in one layer
  • The excited electrons excite other electrons and therefore produce a so-called "avalanche effect"
  • The signal is amplified about 100 times
  • Avalanche photo diodes react sensitively to voltage and temperature changes

S2381产地与重量

Country of origin Japan (JP)
Manufacturer Hamamatsu
Gross weight (incl. package) 1.0 Gram
Dimensions (incl. package) 17 x 7 x 5 MM
Customs number 8541409090
UNSPSC (v5.03) 32111506
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