171-06-453,Darlington transistor TO-3 NPN 120 V, MJ11016G, ON Semiconductor
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MJ11016G - 

Darlington transistor TO-3 NPN 120 V, MJ11016G, ON Semiconductor

ON Semiconductor MJ11016G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJ11016G
仓库库存编号：
171-06-453
技术数据表：
View MJ11016G Datasheet Datasheet
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MJ11016G技术参数

Polarity NPN
Collector-emitter voltage 120 V
Collector current 30 A
Amplification 200 ...
Housing type TO-3

MJ11016G产品信息

Power dissipation 200 W
Amplification ≥200
Related Products: Power transistor TO-126 PNP -80 V | Power transistor TO-220 NPN 100 V | Power transistor TO-126 PNP -80 V | Power transistor TO-220 PNP -100 V | Power transistor TO-247 NPN 60 V
Related Categories: Transistors - Bipolar | Zener Diodes | Power Management | Transistors | Diodes
Related Manufacturers: Texas Instruments | ST | Diotec | Vishay | IR
电话:400-900-3095
QQ:800152669

MJ11016G产地与重量

Country of origin Malaysia (MY)
Manufacturer ON Semiconductor
Gross weight (incl. package) 12.0 Gram
Dimensions (incl. package) 20 x 40 x 5 MM
Customs number 8541290000
UNSPSC (v5.03) 32111607
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